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[ODCAD] Organic TFT Transistor: Material and device physics

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ODCAD

Jan 1, 1970
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The transistor based on organic semiconductor may not be able to
replace Si technology in fast response device product such as CPU.
However, for many other applications such as in address cell circuit
for display device such as OLED (PLED, LED), its performance is good
enough.

The current from drain Id and transconductance gm are proportion to
the charge carrier mobility. Both Id and gm are two important
characters to show the performance of the device. Large Id means low
resistance of the device, which result in small size of the device.
Large gm means high amplifying capability that also result in the
reduction of device size. Mobility has big effect to both Id and gm.
Device physics model (simulation) can be found in many text book.

For organic semiconductor, its mobility is usually much smaller than
crystal Si material. The best value obtained so far is 5 cm2/V-S (some
lab claims that 10 cm2/V-s). How can engineer improve organic
transistor performance? A complete article posted in Organice device
group (http://groups.yahoo.com/group/OrganicDevice/) may have a few
good tips.

ODCAD from OD Software Incorporated (ODSI) http://www.odcad.com/-the
expert and tool kit provider of electronic material, device.
 
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