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The junction voltage of a diode changes by about -2mV per deg C rise, but if you want to experiment you can use the base-emitter junction of a transistor in an 'amplified-diode' configuration as shown in the attachment, to give a greater change.
View attachment 22308
This behaves like a diode with a 0.6V junction voltage multiplied by approximately (1 + R1/R2), and a correspondingly multiplied change with temperature.
Correct. The 'amplified diode' voltage appears between the collector and emitter terminals in the circuit shown.The BE junction of a transistor changes by the same amount. They are all PN junctions.