2N7000's Vgs

[[email protected]]

.]
The BSS138 has a max Vgs(th) of 1.5 V at Ids=1mA, which is a higher
current than many other threshold voltages are specified at.

http://www.supertex.com/pdf/datasheets/TN2501.pdf

1mA at 1V

That's a monster! SOT-89, Ciss = 110pF!

No, D2PAK, Ciss = 2000pF is an monster. Perhaps its a "monsteret".

Okay, "monstret" then. I *do* love the 1mA @ 1v Vgs.

Cheers,
James Arthur

 

[Uwe Bonnes]

Uwe Bonnes wrote???

...> > Look at Philips ...UN series. They are spezified at 1.8 V VGS

Could you please help to provide the link? Thank you very much.

because I can't find it...

here is the link I found:
http://www.semiconductors.philips.com/products/discretes/index.html

E.g. http://www.semiconductors.philips.com/pip/PMWD16UN.html

Farnell carries this type.

http://www.semiconductors.philips.com/acrobat/literature/9397/75015336.pdf
is an overview

 

[John Larkin]

Ken Smith wrote:
.]
The BSS138 has a max Vgs(th) of 1.5 V at Ids=1mA, which is a higher
current than many other threshold voltages are specified at.

http://www.supertex.com/pdf/datasheets/TN2501.pdf

1mA at 1V

That's a monster! SOT-89, Ciss = 110pF!

No, D2PAK, Ciss = 2000pF is an monster. Perhaps its a "monsteret".

Okay, "monstret" then. I *do* love the 1mA @ 1v Vgs.

Cheers,
James Arthur

Hi, James,

We got some samples of some SO-8 sized power-pad GaN fets. 120 volts,
Idss=2.5 amps, enhance to 7 amps, pinchoff about -1.7, 30 pF gate
capacitance. They are to drool for.

John

 

[[email protected]]

Hi, James,

We got some samples of some SO-8 sized power-pad GaN fets. 120 volts,
Idss=2.5 amps, enhance to 7 amps, pinchoff about -1.7, 30 pF gate
capacitance. They are to drool for.

Hi John,
Those _are_ to drool for. I suspect a bunch of electrons are going
to have some mighty sore necks in the not-too-distant future, from
being whiplashed at some rather uncommon rates.

Best,
James

 

[Boki]

..> > Look at Philips ...UN series. They are spezified at 1.8 V VGS




E.g. http://www.semiconductors.philips.com/pip/PMWD16UN.html

Farnell carries this type.

http://www.semiconductors.philips.com/acrobat/literature/9397/75015336.pdf
is an overview

--
Uwe Bonnes [email protected]-darmstadt.de

Institut fuer Kernphysik Schlossgartenstrasse 9 64289 Darmstadt
--------- Tel. 06151 162516 -------- Fax. 06151 164321 ----------

I got it! Thank you so much!

Best regards,
Boki.

 

[linnix]

linnix 寫�：


Hi,

Here is the circuit I am going to do: ( I want to replace transistors )
http://photos1.blogger.com/blogger/1641/2018/1600/led.png

Here is the model
http://www.fairchildsemi.com/models/email_model_file.jsp?file=2N7000.mod

This is the circuit with 3904s. What is the actual circuit you ran the
simulation on?
What wrong with 3904s?

 

[Boki]

linnix 寫�：

This is the circuit with 3904s. What is the actual circuit you ran the
simulation on?
What wrong with 3904s?

1. 3904 is much cheap than 2N7000
2. 2N7000 has much lower leakage current in this app.
3. 2N7000 has 3V vgs that is not sutable in this app.

Best regards,
Boki.

 

[Winfield Hill]

Boki wrote...

Here is the model
http://www.fairchildsemi.com/models/email_model_file.jsp?file=3D2N7000.mod

Simulation result:
http://photos1.blogger.com/blogger/1641/2018/1600/2n7000_test.png
http://photos1.blogger.com/blogger/1641/2018/1600/2N7000.png

The model is TOTALLY wrong, as is your simulation result.
Most MOSFET models do not work in the sub-threshold region.
Measure a real 2n7000, instead of pushing a computer mouse.

 

[Boki]

Winfield Hill 寫�：

Boki wrote...

The model is TOTALLY wrong, as is your simulation result.
Most MOSFET models do not work in the sub-threshold region.
Measure a real 2n7000, instead of pushing a computer mouse.

Vto=3V

this mos work beyond 3v, why wrong?

Best regards,
Boki