Yes, if you consider the Vgs(th) as a parameter that can be altered by the designer of the mosfet, roughly speaking an enhancement mode mosfet has a Vgs(th) greater than zero and a depletion mode device has one less than or equal to zero. This represents a continuum where we place enhancement vs depletion devices either side of zero and logic level devices arbitrarily close to zero.
It is theoretically possible to make an enhancement mode jfet, but it would be about as useful as equally possible (enhancement or depletion mode) mosfets where the Vgs(th) was greater than Vgs(max).
If you made a enhancement JFET, it would not be a JFET any more would it?
Ratch