Jamie said:
Schottky diodes are nice due to their low Vf, they seem to be kind of hard
to get in large Vrb these days. I did recently see some
article on schottky up in the 1200..1500 volt range but I do not know
who is making them atm..
Pretty much Cree and Infineon, and I read something about Dow and a couple
others growing the SiC wafers (raw material, not the finished chips).
Note that schottky diodes suffer increased losses when constructed for
higher breakdown. A 40V diode might drop 0.7V at rated current, while an
80V diode might drop 0.9V. A comparable (100V) junction diode might drop
1.0V, so the conduction savings is modest. "Super barrier" schottkies go up
to 300V, using some interesting MOS structures to improve breakdown; these
structures increase the voltage drop further, so that a 300V schottky has
essentially identical conduction losses to a 400V junction diode.
Anything beyond there (600V, 1200V and more) is SiC at this time. As far as
I know, these are fabricated pretty much like a 40V Si schottky, but with
accordingly higher bandgap and breakdown, the voltage drop is much higher.
Resistivity is particularly high, so much so that a SiC schottky looks worse
than a high speed junction diode in most uses (Vf ~ 2V at rated current,
IIRC).
The main advantages to schottky are for rectification under 20V, and high
frequency (over 500kHz or so), where recovery losses dominate.
When evaluating a design, also keep in mind that schottkies have
tremendously higher capacitance. A low voltage (50-200V), high speed
junction diode can recover faster (~50ns) than a schottky takes to recharge
(could be >100ns at < half rated current); this, as well as the strong
nonlinearity, can actually worsen performance.
Tim