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Q on Transistor

Discussion in 'Electronic Basics' started by Wong, Oct 15, 2004.

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  1. Wong

    Wong Guest

    Hi,

    Is it possible to saturate the NPN BJT transistor in this biasing ?
    Vcc
    ___
    |
    |
    |
    _| C
    B |
    ---- Resistor ----|
    |
    -
    | E
    |---------------- Output
    |
    Resistor
    |
    |
    |
    ---
    - Ground


    Since the transistor is OFF when '0' to base and hence output is '0'.
    Then when '1' to base I would like to have 4.5V at the output, is that
    possible to bias the transistor in saturation region (since Vce no
    more <0.2V)?
     
  2. Yes, if you drive it with a voltage at least one diode drop above Vcc.
    Otherwise, it wont saturate, only clip.

    Kevin Aylward

    http://www.anasoft.co.uk
    SuperSpice, a very affordable Mixed-Mode
    Windows Simulator with Schematic Capture,
    Waveform Display, FFT's and Filter Design.
     
  3. Rich Grise

    Rich Grise Guest

    Is "saturation" even meaningful in an emitter follower?

    Thanks,
    Rich
     
  4. Sure. Saturation implies that the collector to emitter voltage is
    less than the base to emitter voltage (the collector to base junction
    becomes forward biased). If this circuit is driven with a voltage
    more positive than the collector supply, the transistor may well
    saturate.
     
  5. John Larkin

    John Larkin Guest

    Yup, "inverted state saturation". This can be very cool; if one were
    to pull the left side of the resistor up above Vcc, the transistor
    drop will go very low, like normal saturation. Pull up more, and it
    can go to zero, and then *below* zero with the right transistor. I did
    a 16-bit DAC once using discrete transistors and an R-2R wirewound
    resistor network, with the base currents of the first few stages
    tweaked for exactly zero saturation voltage.

    John
     
  6. Wong

    Wong Guest

    OK, one more question.
    If my transistor datasheet stated that the minimum hFE (DC current
    transfer ratio) is 100 and the maximum is 400, can I still force this
    transistor into saturation where hFE normally is 10 in saturated
    transistor?

    Thank you.
     
  7. Yes. That beta spec applies only at some collector to emitter minimum
    voltage and some maximum collector current. If the minimum collector
    voltage is not met, the hfe falls dramatically, since it is reverse
    bias across the collector to base junction that sweeps the charge
    carriers injected into the base region by the emitter (perhaps I
    should say, emitted by the emitter) efficiently to the collector (the
    reverse bias collects those charges out of the reverse biased layer of
    the base region). The base is called what it is because originally it
    was the physical object that emitters and collectors were diffused
    into from opposite sides.

    Once the base voltage rises above the collector voltage, the base to
    collector junction becomes forward biased, and base current diverts
    directly to the collector (in addition to any feeble emitter charge
    collection taking place). At some value of base collector forward
    bias, the base to collector current must exceed the base to emitter
    forward bias current, since there is no load resistor limiting this
    current in the collector path. At that point, the hfe must be less
    than 1.
     
  8. John Larkin

    John Larkin Guest


    Yup. If you jam in 1/10 as much base current as the load current, that
    would be called a "forced beta" of 10.

    But more base current doesn't always lead to lower saturation voltage.
    For either the normal or inverted setup, there's some base current
    that makes for the lowest Vce. A forced beta of 10 should be pretty
    good, though.

    John
     
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