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need help from GC-eDRAMs experts

vlsi_lady

Sep 27, 2016
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Sep 27, 2016
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Hi, I'm desperate..please help me :)

1. how to measure the data retention time?

2. how to measure the smallest refresh-pulse-width possible?

(I'm using virtuoso if relevant..)

thanks!!
 

(*steve*)

¡sǝpodᴉʇuɐ ǝɥʇ ɹɐǝɥd
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Jan 21, 2010
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1) increase the time until data starts getting corrupted.

2) decrease the time until data starts getting corrupted.

Note that testing for data corruption is non-trivial. You need to test worst case patterns where nearby 1 cells leak into a 0 cell and give versa. This requires intimate knowledge of the layout of the chip or lots of trial and error. In addition you need to find the most affected bit(s) as not all will be equally problematic.

If the device will be carried to high altitudes then you may need to take that into account as well.

Oh, temperature will affect things too.

Is it really worth it?
 

(*steve*)

¡sǝpodᴉʇuɐ ǝɥʇ ɹɐǝɥd
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Jan 21, 2010
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I just assumed he was testing DRAM using a really good pianist.
 
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