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Discussion in 'Electronic Basics' started by jasen, Jan 14, 2007.

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  1. jasen

    jasen Guest

    Why MOS referred to Metal-Oxide Semiconductor when there is
    typically no Metal-Oxide present ? Should it be Metal-Oxide-Semiconductor
    representing the three layers of the device?
  2. Phil Allison

    Phil Allison Guest

  3. "A metal-oxide-semiconductor (MOS) structure is obtained by depositing a
    layer of silicon dioxide (SiO2) and a layer of metal (polycrystalline
    silicon is actually used instead of metal) on top of a semiconductor die. As
    the silicon dioxide is a dielectric material its structure is equivalent to
    a plane capacitor, with one of the electrodes replaced by a semiconductor."

    Read more here:
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