So this is an extract from "Electronic Devices and Circuits", by David A Bell, 5th Edition, Oxford University Press, about an n-channel JFET.
"When a gate-source voltage(VGS) is applied with the gate negative with respect to the source, the gate-channel pn junctions are reverse biased. The channel is more lightly doped than the gate material, so the depletion regions penetrate deep into the channel."
Now, I can understand what the term "Depletion Region Penetration" means, because I read that concept before in BJTs, but how do we decide, given a particular biasing, where the depletion region penetrates furthest?(n-side or p-side)
If someone could clear up this doubt without too much electronics jargon, it'd be helpful.
(I've only done Diodes, Rectifiers, and BJTs before this)
Thanks.
-Vivek
"When a gate-source voltage(VGS) is applied with the gate negative with respect to the source, the gate-channel pn junctions are reverse biased. The channel is more lightly doped than the gate material, so the depletion regions penetrate deep into the channel."
Now, I can understand what the term "Depletion Region Penetration" means, because I read that concept before in BJTs, but how do we decide, given a particular biasing, where the depletion region penetrates furthest?(n-side or p-side)
If someone could clear up this doubt without too much electronics jargon, it'd be helpful.
(I've only done Diodes, Rectifiers, and BJTs before this)
Thanks.
-Vivek