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IGBT dual high power, high frequency, high voltage switching units

Discussion in 'Electronic Design' started by bernado, Feb 5, 2007.

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  1. bernado

    bernado Guest

    IPM - International Perforation Management
    fax : 0049 - (0) 1212-5-375-17-531
    Email : -

    IGBT dual high power, high frequency, high voltage switching units

    Patent DE 103.28.937.2

    On a high level operate engineering company develops a dual, high
    power, high frequency switching unit which works with hybrid drives,
    compact EMI safe semiconductor stages, supporting capacitors, high
    voltage ferrite transformers to generate HV short pulses and sparking
    groups. Advantages are based on uses of standard circuits with
    extended semiconductors for e.g. nano, sub or micro perforation
    applications, corona treatments etc. The company is looking for
    science or industrial partners who are interested in a licence
    agreement and / or technical co-operation.

    Working principle
    Industry application of electrostatic perforation for fast running
    paper webs using IGBT, MOSFET or HVFET semiconductor power stages.
    These circuits working as upward converters with power pulses in
    ranges from 5 µS up to 25 µS and high current peaks up to 300 Amps on
    a serial connected inductivity and loading capacity that the secondary
    ferrite transformer coils supply sparking electrodes up to 50 KVss.

    The circuit works itself with alternating clock frequencies and
    changes of pulse widths a common load condenser and coupled primary
    inductance of a ferrite high voltage transformer as upward power/pulse
    converter and non resonance frequency operation.

    A safety circuit logic and two hybrid drivers allows a alternately
    switching of semiconductor A and B which generating higher operation
    frequencies and power levels meanwhile the electrical and thermal
    conditions remains on each in the same range as a single switching

    Circuit advantages
    A controlled pulse timing into a certain time window with a constant
    or variable frequency generating hole sizes and hole sequences with
    high voltage sparking through the material webs by nano or micro
    perforation. The repeating frequencies of the entire circuit can up to
    the double switching frequency as of each semiconductor stage.

    A changeable current in the spark channel are feasible with total
    switching frequencies up to 150 kHz. And in the same time the dual
    semiconductor switching unit allows a double power level as just only
    with one switching element is possible.

    Dual IGBT, HVFETS or MOSFETS semiconductors in high power, high
    current, high voltage circuits obtain in electrostatic nano, sub micro
    perforation, corona treatment or other switching application
    frequencies up to 250 KHz, power levels up to 30 KW and more. Higher
    power efficiencies and harder switching periods are further

    In conclusion the approximately double frequency and power level
    operation obtains higher switching efficiencies, much more perforation
    power or higher corona treatment levels which are depend of the
    industry application.

    Nano, Sub Micro Perforation
    Perforation results are now achieve for nano, sub and micro
    perforation of flexible webs with ultra small pores and products made
    of these materials. Materials finishing are of interest for numerous
    demands in the field of packaging, in filling, non wovens industry,
    technical and science applications, etc. For many years fine and other
    paper webs with base weights between 20 up to 150 g/sqm have been
    perforated electro statically in large surface all over areas or zone
    designs of 2.0 - 6.0 mm width.

    Pore sizes from 0.5 µm - 60 µm or 1 to 100 microns, pore distributions
    of up to 4 Million per sqm in area perforation or respectively 3OO
    holes per sqcm by zone perforation and hole sequences up to 16 Million
    per Second can be reached. Air permeabilities or porosity ranges are
    among from 50 up to 2,500 C.U. (ml/sqcm/min) respectively 3 to 50 l/
    sqm/sec. (Franksystem ) by paper web speeds up to 450 m/min and web
    widths up to 1200 mm are archive able.

    Electrostatic perforation processes and machines, corona treatment,
    surface treatment, high power switching devices, power supplies, AC&DC
    and other switching converter systems, drives, etc.
    Fine paper, cigarette, packaging or other fine paper industries,
    corona system manufacture, switching device manufacture, high-power
    converter equipment, AC/DC, DC/AC industry etc.

    The new dual semiconductor circuit design allows applications to build
    hybrid drives, semiconductor high-level stage, upward, downward or
    other converters or generators which operating with supporting
    capacitors, high-voltage ferrite transformers in an extremely compact
    and modular design. Several advantages are the high efficiency of
    pulse/power transmission and energy ratios.
    Traditional corona or other type of medium generators up to 30 KHz
    operation ranges are easy to modify to a double frequency and power
    levels operation.

    Patent downloads:
    main link:

    Power Sources links
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