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HSPICE measuring mosfet model parameters

Discussion in 'Electronic Design' started by [email protected], Feb 1, 2007.

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  1. Guest

    Hi,

    I am using monte carlo mode simulation in HSPICE. I am varying the VT
    and TOX for each of the tarnsistors. I am using MODMONTE=1 so that
    HSPICE automatically assigns the different values of TOX and VT to
    each transistor in the circuit. Is there anyway of measuring the what
    value VT and TOX take in each loop of the iteration for each of the
    mosfets? Or could I specify the parameters VT and TOX outside the
    model statement like length and width?
    Thanks in advance.


    Regards,
    Balaji.
     
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