Connect with us

HSPICE measuring mosfet model parameters

Discussion in 'Electronic Design' started by [email protected], Feb 1, 2007.

Scroll to continue with content
  1. Guest


    I am using monte carlo mode simulation in HSPICE. I am varying the VT
    and TOX for each of the tarnsistors. I am using MODMONTE=1 so that
    HSPICE automatically assigns the different values of TOX and VT to
    each transistor in the circuit. Is there anyway of measuring the what
    value VT and TOX take in each loop of the iteration for each of the
    mosfets? Or could I specify the parameters VT and TOX outside the
    model statement like length and width?
    Thanks in advance.

Ask a Question
Want to reply to this thread or ask your own question?
You'll need to choose a username for the site, which only take a couple of moments (here). After that, you can post your question and our members will help you out.
Electronics Point Logo
Continue to site
Quote of the day