M
[email protected]
- Jan 1, 1970
- 0
Hello,
Pretty basic question here. Let's say I have a slab of intrinsic Si
just above 0 Kelvin so thermal effects are negligible, the valence
band is full and the conduction band is empty. To get an electron out
of the valence band would it just be a matter of me applying about a
1.2 V drop (minimum band gap voltage) across just one Si atom to rip
out a valence electron bond and get it into the conduction band? So
we're talking a field of about 1.2 V/2A = 6e9 V/m (assuming we take
the diameter of the Si atom and its electron cloud to be 2 A). I
suppose this would be a back-of-the-envelope description of intrinsic
breakdown. Can the energy-level diagram be even remotely considered
for such calculations?
MoMo
Pretty basic question here. Let's say I have a slab of intrinsic Si
just above 0 Kelvin so thermal effects are negligible, the valence
band is full and the conduction band is empty. To get an electron out
of the valence band would it just be a matter of me applying about a
1.2 V drop (minimum band gap voltage) across just one Si atom to rip
out a valence electron bond and get it into the conduction band? So
we're talking a field of about 1.2 V/2A = 6e9 V/m (assuming we take
the diameter of the Si atom and its electron cloud to be 2 A). I
suppose this would be a back-of-the-envelope description of intrinsic
breakdown. Can the energy-level diagram be even remotely considered
for such calculations?
MoMo