J
James Rollins
- Jan 1, 1970
- 0
The terminal voltages of a BJT are drastically different. Is there an
issue when driving BJT's as with MOSFETS gate source voltage? I've
done some testing and it seems one doesn't have to worry too much
about driving the base of a bjt because of the diode characteristics.
One NPN I plan on using for a capacitor multiplier is rated at
V_CB=1100V, V_CE=800V, V_BE=7V. Since this will be used in a sort of
"high side" configuration I'm unsure of how to deal with keeping V_BE
within spec. From what I understand it is not a big deal unless I'm
running huge currents into the base?
If this is the case then do I need to worry about extreme voltage
spikes such as putting a zener across the base and emitter or is this
even a waste?
My question is mainly do I need to worry about the base-emitter
voltage spec in a similar fashion as mofsets gate-source or for most
applications is it not a big deal?
Thanks
issue when driving BJT's as with MOSFETS gate source voltage? I've
done some testing and it seems one doesn't have to worry too much
about driving the base of a bjt because of the diode characteristics.
One NPN I plan on using for a capacitor multiplier is rated at
V_CB=1100V, V_CE=800V, V_BE=7V. Since this will be used in a sort of
"high side" configuration I'm unsure of how to deal with keeping V_BE
within spec. From what I understand it is not a big deal unless I'm
running huge currents into the base?
If this is the case then do I need to worry about extreme voltage
spikes such as putting a zener across the base and emitter or is this
even a waste?
My question is mainly do I need to worry about the base-emitter
voltage spec in a similar fashion as mofsets gate-source or for most
applications is it not a big deal?
Thanks