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Channel Length Modulation

Discussion in 'Electronic Basics' started by [email protected], Feb 27, 2006.

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  1. Guest

    Hi friends,

    I'm studying channel length modulation (CLM) in MOSFET. Simply
    speaking, when a n-channel transistor is in saturation region and Vds
    is increased with fixed Vgs, Id increases linearly due to CLM. This is
    because the depletion region depth of the reverse-bias diode across the
    drain and the substrate gets larger and larger with increasing Vds,
    causing shorter effective length.

    My question is: As the effective length of transistor decreases, would
    it introduce velocity saturation which decreases Id and in turn makes
    Id constant with increasing Vds??

    Hope it arouses your interest ~

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