C
[email protected]
- Jan 1, 1970
- 0
Hi friends,
I'm studying channel length modulation (CLM) in MOSFET. Simply
speaking, when a n-channel transistor is in saturation region and Vds
is increased with fixed Vgs, Id increases linearly due to CLM. This is
because the depletion region depth of the reverse-bias diode across the
drain and the substrate gets larger and larger with increasing Vds,
causing shorter effective length.
My question is: As the effective length of transistor decreases, would
it introduce velocity saturation which decreases Id and in turn makes
Id constant with increasing Vds??
Hope it arouses your interest ~
Will
I'm studying channel length modulation (CLM) in MOSFET. Simply
speaking, when a n-channel transistor is in saturation region and Vds
is increased with fixed Vgs, Id increases linearly due to CLM. This is
because the depletion region depth of the reverse-bias diode across the
drain and the substrate gets larger and larger with increasing Vds,
causing shorter effective length.
My question is: As the effective length of transistor decreases, would
it introduce velocity saturation which decreases Id and in turn makes
Id constant with increasing Vds??
Hope it arouses your interest ~
Will