Hi Mac,
Sorry for making trouble. I should have made it clear about my
question.
Actually, I'd like to step up Vin by 10V to Vout which is the supply
voltage of a AND logic gate. This AND gate drives the gate(Vg) of a
N-channel power MOSFET. But at the same time, the value of Vs is more
or less the same as Vin. That's why I want to step up Vin by 10V in
order to turn on the MOSFET completely.
Have you considered using a P-Channel MOSFET with its gate pulled up to
VCC (or VDD)? Then it would be easy to turn it on, provided it is a logic
level MOSFET.
Hahaha, one thing I should have verified is that Vin is FIXED. The Vin
given before is just a range of possible voltages.
What I really want to know is: For Vin=3V, I make a boost converter
(boost converter IC + different values of components, e.g. L, R, C )
to step up Vout to 13V. Up til now, I think everything should be
correct. But, then, I change Vin=10V. MY QUESTION is: Is it possible
to step up Vout to 20V without changing the values of the components??
There is probably some way to do this, but it would not be a standard
application of the IC's that I am familiar with. They are usually designed
to regulate to a particular voltage, and are usually NOT designed to be
put in series with their V_IN.
Vin could be 3V-10V or higher
I see that you specified that in the post I replied to, so my apologies.
Why do you need 100mA to turn on a MOSFET? Is it because you want to turn
it on quickly, and switch it at a (relatively) high rate?
Vin is FIXED. The range is mentioned above.
It would be nice if I could make Vout = Vin + 10V as I explained
above.
Now that I know you are trying to turn on a MOSFET I have a better
understanding of your needs.
I have stable voltage supplies, 3V or whatever stable voltage source.
Thanks for your help in advance.
Best regards,
Will ^_^
There is a fairly standard technique for turning on high-side MOSFET's in
switching regulator applications which may be applicable to your situation
if you are switching the MOSFET rapidly. It won't get you to Vin + 10, but
it could get you nearly double Vin, which might be enough for you if you
choose the right MOSFET.
The idea is to use a diode and a capacitor. The diode is connected between
VCC (or Vin) and the power supply for the chip driving the MOSFET gate.
The capacitor is connected between the MOSFET source and the power supply
for the chip driving the MOSFET gate. See the following ASCII art
schematic (use courier or similar font). I hope I've got this right:
VCC
|
+----------------------------+
| |
----- |
\ / Diode |
--|-- |
+---------------+ |
| |\| | D
----- Cap | \ ||--+
----- _______| \_______|| N-channel
| + | / G || MOSFET
| | | / ||--+
| Gate |/| | S
| Driver | |
| | |
| GND |
| |
| |
+----------------------------+
|
-----
| L |
| O |
| A |
| D |
-----
|
GND
The gate driver has to be able to withstand VCC * 2. The MOSFET has to be
of a type that can be turned on by VCC, and there has to be frequent
enough switching to guarantee that the capacitor will always be charged up
enough to drive the gate.
--Mac