Leon Heller said:
Has anyone got a SPICE model for the On Semi (was Mot.) BF959? I and someone
else who is interested in using this device can't find one anywhere. I've
bought 2000 of them very cheaply on eBay.
Leon
Here you go:
Si 625mW 20V 100mA 700MHz VHF pkg:TO-92B 3 1 2
-----------------------------------------------
IS: Transport saturation current 10.2e-15
BF: Ideal maximum foward beta 78.00
NF: Foward current emission coefficient 1.000
VAF: Foward Early voltage 80.50
IKF: Foward beta high current roll-off 60.00m
ISE: B-E leakage saturation current 16.80p
NE: B-E leakage emission coefficient 2.000
BR: Ideal maximum reverse beta 4.000
NR: Reverse current emission coefficient 1.000
VAR: Reverse Early voltage 12.00
IKR: Reverse beta high current roll-off 90.00m
ISC: B-C leakage saturation current 0.000
NC: B-C leakage emission coefficient 2.000
RB: Zero-bias base resistance [0,] 2.060
IRB: Current at halfway base resistance 0.000
RBM: High current minimum base resistance 0.000
RE: Emitter resistance [0,] 515.0m
RC: Collector resistance [0,] 206.0m
CJE: B-E zero-bias depletion capacitance [0,] 1.740p
VJE: B-E built-in potential 1.100
MJE: B-E junction exponential factor 500.0m
TF: Ideal foward transit-time [0,] 227.0p
XTF: Coefficient for bias depletion of TF 0.000
VTF: Voltage describing VBC dependence of TF 0.000
ITF: High-current parameter for effect on TF 0.000
PTF: Excess phase at freq.=1.0(TF*2PI) Hz 0.000
CJC: B-C zero-bias depletion capacitance [0,] 2.250p
VJC: B-C built-in potential 300.0m
MJC: B-C junction exponential factor 300.0m
XCJC: Fraction of B-C capacitance at base node 1.000
TR: Ideal reverse transit-time [0,] 158.0n
CJS: Zero-bias collector-saturation capacitance [0,] 0.000
VJS: Substrate junction built-in potential 750.0m
MJS: Substrate junction exponential factor 0.000
XTB: Foward/reverse beta temp. coefficient 1.500
EG: Energy gap for temperature effect on IS 1.110
XTI: Temperature exponent for effect on IS 3.000
KF: Flicker-noise coefficient 0.000
AF: Flicker-noise exponent 1.000
FC: Foward-bias capacitance coefficient 500.0m
TNOM: Paramameter measurement temperature 27.00