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A weird question about the simulation result of ADS

Discussion in 'Electronic Basics' started by [email protected], Jan 18, 2007.

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  1. Guest

    Hello, everyone

    I met a weird question when using ADS... We are simulating the I_D
    current in the NMOS's saturation region that V_DS>=V_GS - V_TH>=0.

    We also computed the current with the equation that
    1/2*u_n*C_ox*W/L*[V_GS - V_TH]^2*(1+lamda*VDS). But the computed
    results are 2X compared with the simulated results.

    We get u_n, E_ox and T_ox directly from a 0.25 um parameter file for
    ADS, and computed C_ox= E_ox/ T_ox. And the other setting for the
    simulation is just the normal. So it is really werid to find that.
    Could you help to give some suggestions?

    Thanks a lot!

    Jan. 18th, 2007
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