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a doubt regarding saturation mode of BJT

Discussion in 'General Electronics Discussion' started by dexterdev, Feb 6, 2012.

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  1. dexterdev


    Feb 6, 2012
    Hi all,
    I have a doubt regarding saturation mode of BJT. Saturation occurs when both emitter-base junction and base-collector junction gets forward biased. For forward biasing a silicon p-n junction only 0.7V is needed. So is for emitter-base junction. But not for base-collector junction. Because we know at saturation voltage across collector and emitter Vce is 0.2V. Using Kirchoff's voltage laws the voltage at base-collector p-n junction is less than 0.7V. Why is it lesser?:confused:

    -Devanand T
  2. jackorocko


    Apr 4, 2010
  3. dexterdev


    Feb 6, 2012
    thanks for the reply sir
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